Samsung recently announced that the company has begun mass production of 3nm chips under GAA (Gate-All-Around) transistor architecture at its fab in Hwaseong, making the company the world's first to achieve the milestone, the Commercial Daily News reported on July 1. Utilizing the GAA (Gate-All-Around) architecture for the first-generation 3nm chips will help overcome the limitations of FinFET (Fin Field-Effect Transistor). The first-generation chips boast to have a 45% reduction in power voltage, a 23% increase in chip performance and a 16%% decrease in surface area compared to 5nm chips. With better performance than the first-generation, the second-generation 3nm GAA chips are slated for mass production by 2023. Meanwhile, the company's 2nm chips using MBCFET (Multi-Bridge-Channel FET) are projected to enter mass production by 2025.

Shipment value of the Taiwanese semiconductor industry is estimated to grow by 17.5% year-on-year to around NT$4.36 trillion (US$146.8 billion; US$1=NT$29.7) in 2022, NT$1.27 trillion (US$42.8 billion) of which will be contributed by the fabless IC industry, according to MIC (Market Intelligence & Consulting Institute), a major government think tank and one of leading IT research institutes in Taiwan. Established in 1987, MIC (Market Intelligence & Consulting Institute) is a division of III (Institute for Information Industry).